Physical Review B (Condensed Matter) -- May 15, 1997 -- Volume 55, Issue 20, pp. 13842-13852
D. E. Turner
Ames Laboratory, U.S. Department of Energy, Department of Physics and Astronomy, Iowa State University, Ames, Iowa
50011
Z. Z. Zhu
Xiamen University, Department of Physics, Fujian 361005, China
C. T. Chan
Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong
K. M. Ho
Ames Laboratory, U.S. Department of Energy, Department of Physics and Astronomy, Iowa State University, Ames, Iowa
50011
(Received 1 November 1996)
We present a careful study of the energetics of vacancy and substitutional impurities in aluminum in both the
bulk and small cluster environments. The calculations are done within the framework of the
local-density-functional formalism and are based on the pseudopotential method with plane-wave
expansion and periodic boundary conditions. Both the ionic and electronic degrees of freedom are fully
relaxed. The electronic structure problem is treated with a preconditioned conjugate-gradient method that
applies equally well to insulators and metals, and is suitable for parallel computing. We have considered up
to 216 atoms in the supercell, and we show that reliable results can be obtained with 108-atom cells with
proper k-point sampling. Vacancy-formation energy, heats of solution of the impurities and the relaxations
near the defects are in good agreement with available experimental data. The energetics of substitution in
small clusters was found to be rather different from bulk.